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QPD2730

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QPD2730

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 16 dB

Transistor Type : HEMT

Output Power : 36 W

Package / Case : NI780-4

Maximum Operating Temperature : + 85 C

Vds - Drain-Source Breakdown Voltage : 48 V

Packaging : Waffle

Maximum Drain Gate Voltage : 55 V

Id - Continuous Drain Current : 210 mA

Pd - Power Dissipation : 18.6 W

Manufacturer : Qorvo

Description : RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN

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The QPD2730,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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