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TGF2965-SM

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TGF2965-SM

Transistor Polarity : P-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 18 dB

Transistor Type : HEMT

Output Power : 6 W

Package / Case : QFN-16

Maximum Operating Temperature : -

Vds - Drain-Source Breakdown Voltage : 32 V

Packaging : Tray

Maximum Drain Gate Voltage : -

Id - Continuous Drain Current : 600 mA

Vgs - Gate-Source Breakdown Voltage : - 2.7 V

Pd - Power Dissipation : 7.5 W

Manufacturer : Qorvo

Description : RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V

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The TGF2965-SM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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