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TGF2953

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TGF2953

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 18.2 dB

Transistor Type : HEMT

Output Power : 41.6 dBm

Package / Case : Die

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 32 V

Packaging : Waffle

Maximum Drain Gate Voltage : 100 V

Id - Continuous Drain Current : 820 mA

Pd - Power Dissipation : 17 W

Manufacturer : Qorvo

Description : RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm

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The TGF2953,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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