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SMMBT5551LT1G

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RTD (Resistance Temperature Detector) [1016]
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SMMBT5551LT1G

Transistor Polarity : NPN

Product Category : Bipolar Transistors - BJT

Maximum DC Collector Current : 0.06 A

Collector- Emitter Voltage VCEO Max : 160 V

Maximum Operating Temperature : + 150 C

Configuration : Single

Collector- Base Voltage VCBO : 180 V

Series : MMBT5551L

Emitter- Base Voltage VEBO : 6 V

Manufacturer : onsemi

Description : Bipolar Transistors - BJT SS HV XSTR SPCL TR

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The SMMBT5551LT1G,from onsemi,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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