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IRFBC40LCPBF

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IRFBC40LCPBF

Technology : MOSFET (Metal Oxide)

On resistance at different Id and Vgs (maximum) : 1.2 Ohm @ 3.7A, 10V

FET Type : N channel

Vgs(th) (maximum) for different Id : 4V @ 250µA

Vgs (maximum) : ±30V

Product Family : Transistor-FET, MOSFET-single

Drive Voltage (Max Rds On, Min Rds On) : 10V

Type of installation : Through Hole

Gate charge (Qg) (maximum) at different Vgs : 39nC @ 10V

Power dissipation (maximum) : 125W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Product Category : MOSFET

Drain-source voltage (Vdss) : 600V

Input capacitance (Ciss) (maximum) at different Vds : 1100pF @ 25V

Current at 25°C-Continuous Drain (Id) : 6.2A (Tc)

Package/shell : TO-220-3

Manufacturer : Vishay Semiconductors

Description : MOSFET N-Chan 600V 6.2 Amp

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The IRFBC40LCPBF,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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