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Transistor Polarity : N-Channel
Technology : Si
Product Category : MOSFET
Mounting Style : Through Hole
Package / Case : TO-220-3
Vds - Drain-Source Breakdown Voltage : 500 V
Packaging : Tube
Vgs th - Gate-Source Threshold Voltage : 4 V
Id - Continuous Drain Current : 13.86 A
Rds On - Drain-Source Resistance : 130 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 25 V
Qg - Gate Charge : 62.5 nC
Manufacturer : STMicroelectronics
Description : MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET
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