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RN1510(TE85L,F)

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RN1510(TE85L,F)

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased

Current - Collector (Ic) (Max) : 100mA

Product Status : Active

Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled)

Frequency - Transition : 250MHz

Mounting Type : Surface Mount

Package : Cut Tape (CT)

Series : -

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) : 50V

Supplier Device Package : SMV

Resistor - Base (R1) : 4.7kOhms

Mfr : Toshiba Semiconductor and Storage

Resistor - Emitter Base (R2) : -

Current - Collector Cutoff (Max) : 100nA (ICBO)

Power - Max : 300mW

Package / Case : SC-74A, SOT-753

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Base Product Number : RN1510

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Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 300mW Surface Mount SMV

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