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NTE912

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NTE912

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays

Current - Collector (Ic) (Max) : 50mA

Product Status : Active

Transistor Type : 5 NPN

Mounting Type : Through Hole

Frequency - Transition : 550MHz

Package : Bag

Series : -

Vce Saturation (Max) @ Ib, Ic : 230mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) : 24V

Supplier Device Package : 14-PDIP

Mfr : NTE Electronics, Inc

Current - Collector Cutoff (Max) : 500nA

Power - Max : 750mW

Package / Case : 14-DIP (0.300", 7.62mm)

Operating Temperature : -55°C ~ 125°C (TA)

DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 1mA, 3V

Base Product Number : NTE9

Description : IC-3 ISOLATED TRANS. 14-LEAD

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Bipolar (BJT) Transistor Array 5 NPN 24V 50mA 550MHz 750mW Through Hole 14-PDIP

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