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HSG1002VE-TL-E

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HSG1002VE-TL-E

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors

Current - Collector (Ic) (Max) : 35mA

Product Status : Obsolete

Transistor Type : NPN

Mounting Type : Surface Mount

Frequency - Transition : 38GHz

Package : Bulk

Series : -

Voltage - Collector Emitter Breakdown (Max) : 3.5V

Supplier Device Package : 4-MFPAK

Mfr : Renesas Electronics America Inc

Noise Figure (dB Typ @ f) : 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz

Power - Max : 200mW

Gain : 8dB ~ 19.5dB

Package / Case : 4-SMD, Gull Wing

DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 2V

Description : RF 0.035A C BAND GERMANIUM NPN

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RF Transistor NPN 3.5V 35mA 38GHz 200mW Surface Mount 4-MFPAK

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