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JANSF2N3810L

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JANSF2N3810L

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays

Current - Collector (Ic) (Max) : 50mA

Product Status : Active

Transistor Type : 2 PNP (Dual)

Mounting Type : Through Hole

Frequency - Transition : -

Package : Bulk

Series : Military, MIL-PRF-19500/336

Vce Saturation (Max) @ Ib, Ic : 250mV @ 100µA, 1mA

Voltage - Collector Emitter Breakdown (Max) : 60V

Supplier Device Package : TO-78-6

Mfr : Microchip Technology

Current - Collector Cutoff (Max) : 10µA (ICBO)

Power - Max : 350mW

Package / Case : TO-78-6 Metal Can

Operating Temperature : -65°C ~ 200°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 1mA, 5V

Base Product Number : 2N3810

Description : NPN TRANSISTOR

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Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

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