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RQ3E070BNTB

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RQ3E070BNTB

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 1mA

Operating Temperature : 150°C (TJ)

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 8.9 nC @ 10 V

Rds On (Max) @ Id, Vgs : 27mOhm @ 7A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 410 pF @ 15 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : 8-HSMT (3.2x3)

Mfr : Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C : 7A (Ta)

Power Dissipation (Max) : 2W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : RQ3E070

Description : MOSFET N-CH 30V 7A 8HSMT

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N-Channel 30 V 7A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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