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STP20NM60

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STP20NM60

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 250µA

Operating Temperature : 150°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 54 nC @ 10 V

Rds On (Max) @ Id, Vgs : 290mOhm @ 10A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1500 pF @ 25 V

Mounting Type : Through Hole

Series : MDmesh™

Supplier Device Package : TO-220

Mfr : STMicroelectronics

Current - Continuous Drain (Id) @ 25°C : 20A (Tc)

Power Dissipation (Max) : 192W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : STP20

Description : MOSFET N-CH 600V 20A TO220AB

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N-Channel 600 V 20A (Tc) 192W (Tc) Through Hole TO-220

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