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CSD19537Q3T

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CSD19537Q3T

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.6V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 21 nC @ 10 V

Rds On (Max) @ Id, Vgs : 14.5mOhm @ 10A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1680 pF @ 50 V

Mounting Type : Surface Mount

Series : NexFET™

Supplier Device Package : 8-VSON (3.3x3.3)

Mfr : Texas Instruments

Current - Continuous Drain (Id) @ 25°C : 50A (Ta)

Power Dissipation (Max) : 2.8W (Ta), 83W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : CSD19537Q3

Description : MOSFET N-CH 100V 50A 8VSON

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N-Channel 100 V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)

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