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IPD30N03S4L09ATMA1

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IPD30N03S4L09ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.2V @ 13µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs : 20 nC @ 10 V

Rds On (Max) @ Id, Vgs : 9mOhm @ 30A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±16V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1520 pF @ 15 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : PG-TO252-3-11

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 30A (Tc)

Power Dissipation (Max) : 42W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPD30N03

Description : MOSFET N-CH 30V 30A TO252-3

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N-Channel 30 V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3-11

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