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SUD50P10-43L-GE3

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SUD50P10-43L-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs : 160 nC @ 10 V

Rds On (Max) @ Id, Vgs : 43mOhm @ 9.2A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4600 pF @ 50 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : TO-252

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 37.1A (Tc)

Power Dissipation (Max) : 8.3W (Ta), 136W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SUD50

Description : MOSFET P-CH 100V 37.1A TO252

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P-Channel 100 V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252

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