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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Operating Temperature : -40°C ~ 150°C (TJ)
Package / Case : Die
Gate Charge (Qg) (Max) @ Vgs : 4 nC @ 5 V
Rds On (Max) @ Id, Vgs : 180mOhm @ 6A, 5V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 5V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 350 V
Vgs (Max) : +6V, -4V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 628 pF @ 280 V
Mounting Type : Surface Mount
Series : eGaN®
Supplier Device Package : Die
Mfr : EPC
Current - Continuous Drain (Id) @ 25°C : 6.3A (Ta)
Power Dissipation (Max) : -
Technology : GaNFET (Gallium Nitride)
Base Product Number : EPC20
Description : TRANS GAN BUMPED DIE
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EPC2050 Images |
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